Kondo Memory in Driven Strongly Correlated Quantum Dots

Xiao Zheng, YiJing Yan, and Massimiliano Di Ventra
Phys. Rev. Lett. 111, 086601 – Published 19 August 2013
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Abstract

We investigate the real-time current response of strongly correlated quantum dot systems under sinusoidal driving voltages. By means of an accurate hierarchical equations of motion approach, we demonstrate the presence of prominent memory effects induced by the Kondo resonance on the real-time current response. These memory effects appear as distinctive hysteresis line shapes and self-crossing features in the dynamic current-voltage characteristics, with concomitant excitation of odd-number overtones. They emerge as a cooperative effect of quantum coherence—due to inductive behavior—and electron correlations—due to the Kondo resonance. We also show the suppression of memory effects and the transition to classical behavior as a function of temperature. All these phenomena can be observed in experiments and may lead to novel quantum memory applications.

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  • Received 7 April 2013

DOI:https://doi.org/10.1103/PhysRevLett.111.086601

© 2013 American Physical Society

Authors & Affiliations

Xiao Zheng1, YiJing Yan1,2, and Massimiliano Di Ventra3

  • 1Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 2Department of Chemistry, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
  • 3Department of Physics, University of California, San Diego, La Jolla, California 92093, USA

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Issue

Vol. 111, Iss. 8 — 23 August 2013

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