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Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

H. Nakayama, M. Althammer, Y.-T. Chen, K. Uchida, Y. Kajiwara, D. Kikuchi, T. Ohtani, S. Geprägs, M. Opel, S. Takahashi, R. Gross, G. E. W. Bauer, S. T. B. Goennenwein, and E. Saitoh
Phys. Rev. Lett. 110, 206601 – Published 13 May 2013
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Abstract

We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it “spin Hall magnetoresistance.”

  • Received 31 October 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.206601

© 2013 American Physical Society

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Insulating Magnets Control Neighbor’s Conduction

Published 13 May 2013

A newly discovered type of magnetoresistance, resulting from spin-dependent scattering at a metal-magnet interface, may potentially be used to study the magnetization in insulating magnets or to develop new spintronic devices.

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Authors & Affiliations

H. Nakayama1,2, M. Althammer3,4, Y.-T. Chen5, K. Uchida1,6, Y. Kajiwara1, D. Kikuchi1,7, T. Ohtani1, S. Geprägs3, M. Opel3, S. Takahashi1, R. Gross3,8, G. E. W. Bauer1,5,7,*, S. T. B. Goennenwein3,†, and E. Saitoh1,7,9,10,‡

  • 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 2Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
  • 3Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany
  • 4Center for Materials Information Technology MINT and Department of Chemistry, University of Alabama, Tuscaloosa, Alabama 35487, USA
  • 5Kavli Institute of NanoScience, Delft University of Technology, 2628 CJ Delft, The Netherlands
  • 6PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan
  • 7WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 8Physik-Department, Technische Universität München, 85748 Garching, Germany
  • 9CREST, Japan Science and Technology Agency, Tokyo 102-0076, Japan
  • 10The Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan

  • *g.e.w.bauer@imr.tohoku.ac.jp
  • goennenwein@wmi.badw.de
  • saitoheiji@imr.tohoku.ac.jp

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Issue

Vol. 110, Iss. 20 — 17 May 2013

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