Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers

N. Pavarelli, T. J. Ochalski, F. Murphy-Armando, Y. Huo, M. Schmidt, G. Huyet, and J. S. Harris
Phys. Rev. Lett. 110, 177404 – Published 25 April 2013

Abstract

We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms compose the interfaces, only electrons are confined in Ge, whereas both carriers are confined when the interface consists of group-III atoms. The different carrier confinement results in different emission dynamics behavior. This study provides a solution to obtain efficient light emission from Ge.

  • Received 17 October 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.177404

© 2013 American Physical Society

Authors & Affiliations

N. Pavarelli1,2, T. J. Ochalski1,2,*, F. Murphy-Armando1, Y. Huo3, M. Schmidt1, G. Huyet1,2, and J. S. Harris3

  • 1Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland
  • 2Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland
  • 3Electrical Engineering, Stanford University, Stanford, California 94305, USA

  • *tomasz.ochalski@tyndall.ie

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Vol. 110, Iss. 17 — 26 April 2013

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