Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors

N. J. Harmon and M. E. Flatté
Phys. Rev. Lett. 110, 176602 – Published 24 April 2013
PDFHTMLExport Citation

Abstract

A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g., from multiple traps, site-energy disorder, and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intrasite spin relaxation) each produce different characteristic spin relaxation and spin diffusion dependences on temperature. The resulting unique experimental signatures predicted by the theory for each mechanism in organic semiconductors provide a prescription for determining the dominant spin relaxation mechanism.

  • Figure
  • Figure
  • Received 1 October 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.176602

© 2013 American Physical Society

Authors & Affiliations

N. J. Harmon* and M. E. Flatté

  • Department of Physics and Astronomy, Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA

  • *nicholas-harmon@uiowa.edu

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 110, Iss. 17 — 26 April 2013

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×