Magnetic-Field-Induced Delocalized to Localized Transformation in GaAs:N

K. Alberi, S. A. Crooker, B. Fluegel, D. A. Beaton, A. J. Ptak, and A. Mascarenhas
Phys. Rev. Lett. 110, 156405 – Published 12 April 2013

Abstract

The use of a high magnetic field (57 T) to study the formation and evolution of nitrogen (N) cluster and supercluster states in GaAs:N is demonstrated. A magnetic field is used to lift the conduction band edge and expose resonant N cluster states so that they can be directly experimentally investigated. The reduction of the exciton Bohr radius also results in the fragmentation of N supercluster states, enabling a magnetic field induced delocalized to localized transition. The application of very high magnetic fields thus presents a powerful way to probe percolation phenomena in semiconductors with bound and resonant isoelectronic cluster states.

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  • Received 10 September 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.156405

© 2013 American Physical Society

Authors & Affiliations

K. Alberi1, S. A. Crooker2, B. Fluegel1, D. A. Beaton1, A. J. Ptak1, and A. Mascarenhas1

  • 1National Renewable Energy Laboratory, Golden, Colorado 80401, USA
  • 2National High Magnetic Field Laboratory, Los Alamos, New Mexico 87545, USA

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Issue

Vol. 110, Iss. 15 — 12 April 2013

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