Abstract
The formation of germanium is reported. The -Sn phase is first induced by the indentation of amorphous germanium (a-Ge) and the resultant phases on pressure release are characterized by Raman scattering. The expected Raman line frequencies for the various phases of Ge are determined from first-principles calculations using density functional perturbation theory of the zone-center phonons in the diamond, ST12, BC8, and Ge phases. In addition to the phase, traces of BC8 may also be present following pressure release.
- Received 12 August 2012
DOI:https://doi.org/10.1103/PhysRevLett.110.085502
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