Overcoming the Phase Inhomogeneity in Chemically Functionalized Graphene: The Case of Graphene Oxides

Bing Huang, Hongjun Xiang, Qiang Xu, and Su-Huai Wei
Phys. Rev. Lett. 110, 085501 – Published 19 February 2013
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Abstract

The inhomogeneous phase, which usually exists in graphene oxides (GOs), is a long-standing problem that has severely restricted the use of GOs in various applications. By using first-principles based cluster expansion, we find that the existence of phase separation in conventional GOs is due to the extremely strong attractive interactions of oxygen atoms at different graphene sides. Our Monte Carlo simulations show that this kind of phase separation is not avoidable under the current experimental growth temperature. In this Letter, the idea of oxidizing graphene on a single side is proposed to eliminate the strong double-side oxygen attractions, and our calculations show that well-ordered GOs could be obtained at low oxygen concentrations. These ordered GOs behave as quasi-one-dimensional narrow-gap semiconductors with quite small electron effective masses, which can be useful in high-speed electronics. Our concept could be widely applied to overcome the phase inhomogeneity in various chemically functionalized two-dimensional systems.

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  • Received 29 August 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.085501

© 2013 American Physical Society

Authors & Affiliations

Bing Huang1,*, Hongjun Xiang1,2, Qiang Xu1, and Su-Huai Wei1,†

  • 1National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA
  • 2Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, People’s Republic of China

  • *bing.huang@nrel.gov
  • Suhuai.wei@nrel.gov

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Issue

Vol. 110, Iss. 8 — 22 February 2013

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