Vacuum Rabi Splitting in a Semiconductor Circuit QED System

H. Toida, T. Nakajima, and S. Komiyama
Phys. Rev. Lett. 110, 066802 – Published 6 February 2013
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Abstract

Vacuum Rabi splitting is demonstrated in a GaAs double quantum dot system coupled with a coplanar waveguide resonator. The coupling strength g, the decoherence rate of the quantum dot γ, and the decay rate of the resonator κ are derived, assuring distinct vacuum Rabi oscillation in a strong coupling regime [(g,γ,κ)(30,25,8.0)MHz]. The magnitude of decoherence is consistently interpreted in terms of the coupling of electrons to piezoelectric acoustic phonons in GaAs.

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  • Received 22 June 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.066802

© 2013 American Physical Society

Authors & Affiliations

H. Toida*, T. Nakajima, and S. Komiyama

  • Department of Basic Science, University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan

  • *toida@thz.c.u-tokyo.ac.jp
  • Present address: Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.

Comments & Replies

Comment on “Vacuum Rabi Splitting in a Semiconductor Circuit QED System”

A. Wallraff, A. Stockklauser, T. Ihn, J. R. Petta, and A. Blais
Phys. Rev. Lett. 111, 249701 (2013)

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Vol. 110, Iss. 6 — 8 February 2013

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