Proximity Effects Induced in Graphene by Magnetic Insulators: First-Principles Calculations on Spin Filtering and Exchange-Splitting Gaps

H. X. Yang, A. Hallal, D. Terrade, X. Waintal, S. Roche, and M. Chshiev
Phys. Rev. Lett. 110, 046603 – Published 24 January 2013

Abstract

We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene π orbitals by up to 24%, together with a large exchange-splitting band gap of about 36 meV. The position of the Dirac cone is further shown to depend strongly on the graphene-EuO interlayer. These findings point toward the possible engineering of spin gating by the proximity effect at a relatively high temperature, which stands as a hallmark for future all-spin information processing technologies.

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  • Received 26 September 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.046603

© 2013 American Physical Society

Authors & Affiliations

H. X. Yang1, A. Hallal1, D. Terrade1, X. Waintal2, S. Roche3,4, and M. Chshiev1

  • 1SPINTEC, CEA/CNRS/UJF-Grenoble 1/Grenoble-INP, INAC, 38054 Grenoble, France
  • 2SPSMS-INAC-CEA, 17 rue des Martyrs, 38054 Grenoble, France
  • 3CIN2 (ICN-CSIC) and Universitat Autónoma de Barcelona, Catalan Institute of Nanotechnology, Campus UAB, 08193 Bellaterra, Spain
  • 4Institucio Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Spain

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Vol. 110, Iss. 4 — 25 January 2013

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