Mapping Band Alignment across Complex Oxide Heterointerfaces

Bo-Chao Huang, Ya-Ping Chiu, Po-Cheng Huang, Wen-Ching Wang, Vu Thanh Tra, Jan-Chi Yang, Qing He, Jiunn-Yuan Lin, Chia-Seng Chang, and Ying-Hao Chu
Phys. Rev. Lett. 109, 246807 – Published 12 December 2012
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Abstract

In this study, direct observation of the evolution of electronic structures across complex oxide interfaces has been revealed in the LaAlO3/SrTiO3 model system using cross-sectional scanning tunneling microscopy and spectroscopy. The conduction and valence band structures across the LaAlO3/SrTiO3 interface are spatially resolved at the atomic level by measuring the local density of states. This study directly maps out the electronic reconstructions and a built-in electric field in the polar LaAlO3 layer. Results also clearly reveal the band bending and the notched band structure in the SrTiO3 adjacent to the interface.

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  • Received 15 March 2012

DOI:https://doi.org/10.1103/PhysRevLett.109.246807

© 2012 American Physical Society

Authors & Affiliations

Bo-Chao Huang1, Ya-Ping Chiu1,*, Po-Cheng Huang1, Wen-Ching Wang1, Vu Thanh Tra2, Jan-Chi Yang3, Qing He4, Jiunn-Yuan Lin2, Chia-Seng Chang5, and Ying-Hao Chu3

  • 1Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan
  • 2Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan
  • 3Department of Materials Science and Engineering, National Chiao Tung University, HsinChu 300, Taiwan
  • 4Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 5Institute of Physics, Academia Sinica, Taipei 105, Taiwan

  • *Corresponding author. ypchiu@mail.nsysu.edu.tw

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Issue

Vol. 109, Iss. 24 — 14 December 2012

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