Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

D. Riedel, F. Fuchs, H. Kraus, S. Väth, A. Sperlich, V. Dyakonov, A. A. Soltamova, P. G. Baranov, V. A. Ilyin, and G. V. Astakhov
Phys. Rev. Lett. 109, 226402 – Published 27 November 2012
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Abstract

Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nat. Mater. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.

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  • Received 7 August 2012

DOI:https://doi.org/10.1103/PhysRevLett.109.226402

© 2012 American Physical Society

Authors & Affiliations

D. Riedel1, F. Fuchs1, H. Kraus1, S. Väth1, A. Sperlich1, V. Dyakonov1,2, A. A. Soltamova3, P. G. Baranov3, V. A. Ilyin4, and G. V. Astakhov1,*

  • 1Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
  • 2Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg, Germany
  • 3Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
  • 4Saint Petersburg Electrotechnical University, 197376 St. Petersburg, Russia

  • *astakhov@physik.uni-wuerzburg.de

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Vol. 109, Iss. 22 — 30 November 2012

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