Abstract
Using a combination of -contrast imaging and atomically resolved electron energy-loss spectroscopy on a scanning transmission electron microscope, we show that the chemical bonding of individual impurity atoms can be deduced experimentally. We find that when a Si atom is bonded with four atoms at a double-vacancy site in graphene, Si orbitals contribute significantly to the bonding, resulting in a planar -like hybridization, whereas threefold coordinated Si in graphene adopts the preferred hybridization. The conclusions are confirmed by first-principles calculations and demonstrate that chemical bonding of two-dimensional materials can now be explored at the single impurity level.
- Received 19 September 2012
DOI:https://doi.org/10.1103/PhysRevLett.109.206803
© 2012 American Physical Society
Synopsis
Identification by Bonds
Published 15 November 2012
Electron microscopy reveals the bond configurations of individual silicon impurities adsorbed on graphene.
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