Topological Phase Transition in Layered GaS and GaSe

Zhiyong Zhu, Yingchun Cheng, and Udo Schwingenschlögl
Phys. Rev. Lett. 108, 266805 – Published 29 June 2012

Abstract

By fully relativistic first principles calculations, we predict that appropriate strain engineering of layered GaX (X=S, Se) leads to a new class of three-dimensional topological insulators with an excitation gap of up to 135 meV. Our results provide a new perspective on the formation of three-dimensional topological insulators. Band inversion can be induced by strain only, without considering any spin-orbit coupling. The latter, however, is indispensable for the formation of local band gaps at the crossing points of the inverted bands. Our study indicates that three-dimensional topological insulators can also be realized in materials which comprise light elements only.

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  • Received 13 December 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.266805

© 2012 American Physical Society

Authors & Affiliations

Zhiyong Zhu, Yingchun Cheng, and Udo Schwingenschlögl*

  • Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia

  • *udo.schwingenschlogl@kaust.edu.sa, +966(0)544700080

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Issue

Vol. 108, Iss. 26 — 29 June 2012

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