Manipulation of Electronic Transport in the Bi(111) Surface State

G. Jnawali, C. Klein, Th. Wagner, H. Hattab, P. Zahl, D. P. Acharya, P. Sutter, A. Lorke, and M. Horn-von Hoegen
Phys. Rev. Lett. 108, 266804 – Published 28 June 2012
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Abstract

We demonstrate the controlled manipulation of the 2D-electronic transport in the surface state of Bi(111) through the deposition of small amounts of Bi to generate adatoms and 2D islands as additional scatterers. The corresponding increase in resistance is recorded in situ and in real time. Model calculations based on mean-field nucleation theory reveal a constant scattering efficiency of adatoms and of small 2D Bi islands, independent of their size. This finding is supported by a detailed scanning tunneling microscopy and spectroscopy study at 5 K which shows a highly anisotropic scattering pattern surrounding each surface protrusion.

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  • Received 4 November 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.266804

© 2012 American Physical Society

Authors & Affiliations

G. Jnawali1,*, C. Klein1, Th. Wagner1,†, H. Hattab1, P. Zahl2, D. P. Acharya2,‡, P. Sutter2, A. Lorke1, and M. Horn-von Hoegen1

  • 1Department of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg, Germany
  • 2Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA

  • *gr.jnawali@uni-due.de Present address: Departments of Physics and Electrical Engineering, Columbia University, New York, NY 10027, USA.
  • Present address: Johannes Kepler University Linz, Institute of Experimental Physics, Altenberger Str. 69, A-4040 Linz, Austria.
  • Present address: Pacific Northwest National Laboratory, Richland, WA 99352, USA.

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Issue

Vol. 108, Iss. 26 — 29 June 2012

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