Abstract
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the interface and electric field in the wire show that the values found are consistent with the device geometry.
- Received 6 January 2012
DOI:https://doi.org/10.1103/PhysRevLett.108.206812
© 2012 American Physical Society
Synopsis
Two Donors Are Better Than One
Published 17 May 2012
Pairs of donor atoms read out the energy levels in a silicon nanowire.
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