Effective Control of the Charge and Magnetic States of Transition-Metal Atoms on Single-Layer Boron Nitride

Bing Huang, Hongjun Xiang, Jaejun Yu, and Su-Huai Wei
Phys. Rev. Lett. 108, 206802 – Published 14 May 2012
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Abstract

Developing approaches to effectively control the charge and magnetic states is critical to the use of magnetic nanostructures in quantum information devices but is still challenging. Here we suggest that the magnetic and charge states of transition-metal (TM) doped single-layer boron-nitride (SLBN) systems can be easily controlled by the (internal) defect engineering and (external) electric fields (Eext). The relative positions and symmetries of the in-gap levels induced by defect engineering and the TM d-orbital energy levels effectively determine the charge states and magnetic properties of the TM/SLBN system. Remarkably, the application of an Eext can easily control the size of the crystal field splitting of the TM d orbitals and thus, leading to the spin crossover in TM/SLBN, which could be used as Eext-driven nonvolatile memory devices. Our conclusion obtained from TM/SLBN is valid generally in other TM adsorbed layered semiconductors.

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  • Received 3 December 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.206802

© 2012 American Physical Society

Authors & Affiliations

Bing Huang1, Hongjun Xiang2, Jaejun Yu3, and Su-Huai Wei1

  • 1National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA
  • 2Key Laboratory of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, People’s Republic of China
  • 3Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea

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Issue

Vol. 108, Iss. 20 — 18 May 2012

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