Refractive Index of Silicon at γ Ray Energies

D. Habs, M. M. Günther, M. Jentschel, and W. Urban
Phys. Rev. Lett. 108, 184802 – Published 1 May 2012; Erratum Phys. Rev. Lett. 118, 169904 (2017)

Abstract

For x rays the real part of the refractive index, dominated by Rayleigh scattering, is negative and converges to zero for higher energies. For γ rays a positive component, related to Delbrück scattering, increases with energy and becomes dominating. The deflection of a monochromatic γ beam due to refraction was measured by placing a Si wedge into a flat double crystal spectrometer. Data were obtained in an energy range from 0.18 MeV to 2 MeV. The data are compared to theory, taking into account elastic and inelastic Delbrück scattering as well as recent results on the energy dependence of the pair creation cross section. Probably a new field of γ optics with many new applications opens up.

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  • Received 11 November 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.184802

© 2012 American Physical Society

Erratum

Erratum: Refractive Index of Silicon at γ Ray Energies [Phys. Rev. Lett. 108, 184802 (2012)]

D. Habs, M. M. Günther, M. Jentschel, and W. Urban
Phys. Rev. Lett. 118, 169904 (2017)

Authors & Affiliations

D. Habs1,2, M. M. Günther2, M. Jentschel3, and W. Urban3

  • 1Ludwig-Maximilians-Universität München, D-85748 Garching, Germany
  • 2Max-Planck-Institut für Quantenoptik, D-85748 Garching, Germany
  • 3Institut Laue-Langevin, F-38042 Grenoble, France

Comments & Replies

Comment on “Refractive Index of Silicon at γ Ray Energies”

J. T. Donohue
Phys. Rev. Lett. 110, 129501 (2013)

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Vol. 108, Iss. 18 — 4 May 2012

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