Comment on “Magnetic-Field-Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films”

A Comment on the Letter by Yen-Hsiang Lin and A. M. Goldman, Phys. Rev. Lett. 106, 127003 (2011). The authors of the Letter offer a Reply.

Figure 1

(a), (c) The MR curves (solid lines) and activation temperature (dotted lines) with magnetic field. The upper plots were taken at disorder $W=6t$ and the lower at $W=t$. The blue curve (lowest at large fields) is at low temperature $T=0.02t$, and red (highest at large fields) high temperature $T=0.07t$. (b), (d) The MR with scaled magnetic field. The inset (b) shows the variation of resistance with magnetic field and (d) the MR for the experimental data from Ref. 3.