Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

John L. Lyons, Anderson Janotti, and Chris G. Van de Walle
Phys. Rev. Lett. 108, 156403 – Published 13 April 2012
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Abstract

We investigate the properties of Mg acceptors in nitride semiconductors with hybrid functional calculations. We find that although the thermodynamic transition level is relatively close to the valence band in GaN (260 meV), MgGa exhibits key features of a deep acceptor: the hole is localized on a N atom neighboring the Mg impurity, inducing a large local lattice distortion and giving rise to broad blue luminescence. We show that the ultraviolet photoluminescence peak attributed to Mg acceptors in GaN is likely related to Mg-H complexes, explaining the results of photoluminescence and electron paramagnetic resonance experiments. Predictions for Mg acceptors in AlN and InN are also presented.

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  • Received 19 October 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.156403

© 2012 American Physical Society

Authors & Affiliations

John L. Lyons, Anderson Janotti, and Chris G. Van de Walle

  • Materials Department, University of California, Santa Barbara, California 93106-5050, USA

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Issue

Vol. 108, Iss. 15 — 13 April 2012

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