Laser Location and Manipulation of a Single Quantum Tunneling Channel in an InAs Quantum Dot

O. Makarovsky, E. E. Vdovin, A. Patané, L. Eaves, M. N. Makhonin, A. I. Tartakovskii, and M. Hopkinson
Phys. Rev. Lett. 108, 117402 – Published 14 March 2012
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Abstract

We use a femtowatt focused laser beam to locate and manipulate a single quantum tunneling channel associated with an individual InAs quantum dot within an ensemble of dots. The intensity of the directed laser beam tunes the tunneling current through the targeted dot with an effective optical gain of 107 and modifies the curvature of the dot’s confining potential and the spatial extent of its ground state electron eigenfunction. These observations are explained by the effect of photocreated hole charges which become bound close to the targeted dot, thus acting as an optically induced gate electrode.

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  • Received 13 September 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.117402

© 2012 American Physical Society

Authors & Affiliations

O. Makarovsky1, E. E. Vdovin1,2, A. Patané1, L. Eaves1,*, M. N. Makhonin3, A. I. Tartakovskii3, and M. Hopkinson4

  • 1School of Physics and Astronomy, The University of Nottingham, NG7 2RD, United Kingdom
  • 2Institute of Microelectronics Technology RAS, 142432 Chernogolovka, Russia
  • 3Department of Physics and Astronomy, University of Sheffield, Sheffield S3 3JD, United Kingdom
  • 4Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S3 3JD, United Kingdom

  • *Corresponding author Laurence.Eaves@nottingham.ac.uk

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Issue

Vol. 108, Iss. 11 — 16 March 2012

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