Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot

J. Houel, A. V. Kuhlmann, L. Greuter, F. Xue, M. Poggio, B. D. Gerardot, P. A. Dalgarno, A. Badolato, P. M. Petroff, A. Ludwig, D. Reuter, A. D. Wieck, and R. J. Warburton
Phys. Rev. Lett. 108, 107401 – Published 5 March 2012; Erratum Phys. Rev. Lett. 108, 119902 (2012)
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Abstract

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with ±5nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

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  • Received 3 October 2011
  • Corrected 6 March 2012

DOI:https://doi.org/10.1103/PhysRevLett.108.107401

© 2012 American Physical Society

Corrections

6 March 2012

Erratum

Publisher’s Note: Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot [Phys. Rev. Lett. 108, 107401 (2012)]

J. Houel, A. V. Kuhlmann, L. Greuter, F. Xue, M. Poggio, B. D. Gerardot, P. A. Dalgarno, A. Badolato, P. M. Petroff, A. Ludwig, D. Reuter, A. D. Wieck, and R. J. Warburton
Phys. Rev. Lett. 108, 119902 (2012)

Authors & Affiliations

J. Houel1, A. V. Kuhlmann1, L. Greuter1, F. Xue1, M. Poggio1, B. D. Gerardot2, P. A. Dalgarno2, A. Badolato3, P. M. Petroff4, A. Ludwig1,5, D. Reuter5, A. D. Wieck5, and R. J. Warburton1

  • 1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • 2School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
  • 3Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA
  • 4Materials Department, University of California, Santa Barbara, California 93106, USA
  • 5Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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Issue

Vol. 108, Iss. 10 — 9 March 2012

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