Abstract
We predict a quantum phase transition from normal to topological insulators in the transition metal oxide , where the transition can be driven by the change of the long-range hopping and trigonal crystal field terms. From the first-principles-derived tight-binding Hamiltonian, we determine the phase boundary through the parity analysis. In addition, our first-principles calculations for model structures show that the interlayer distance can be an important parameter for the existence of a three-dimensional strong topological insulator phase. is suggested to be a candidate material which can have both a nontrivial topology of bands and strong electron correlations.
- Received 18 October 2011
DOI:https://doi.org/10.1103/PhysRevLett.108.106401
© 2012 American Physical Society