Advanced Simulation of Conductance Histograms Validated through Channel-Sensitive Experiments on Indium Nanojunctions

P. Makk, D. Visontai, L. Oroszlány, D. Zs. Manrique, Sz. Csonka, J. Cserti, C. Lambert, and A. Halbritter
Phys. Rev. Lett. 107, 276801 – Published 28 December 2011
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Abstract

We demonstrate a self-contained methodology for predicting conductance histograms of atomic and molecular junctions. Fast classical molecular-dynamics simulations are combined with accurate density functional theory calculations predicting both quantum transport properties and molecular-dynamics force field parameters. The methodology is confronted with experiments on atomic-sized indium nanojunctions. Beside conductance histograms the distribution of individual channel transmission eigenvalues is also determined by fitting the superconducting subgap features in the IV curves. The remarkable agreement in the evolution of the channel transmissions demonstrates that the simulated ruptures are able to reproduce a realistic statistical ensemble of contact configurations, whereas simulations on selected ideal geometries show strong deviations from the experimental observations.

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  • Received 26 July 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.276801

© 2011 American Physical Society

Authors & Affiliations

P. Makk1, D. Visontai2, L. Oroszlány3, D. Zs. Manrique2, Sz. Csonka1, J. Cserti3, C. Lambert2, and A. Halbritter1

  • 1Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, 1111 Budapest, Budafoki ut 8., Hungary
  • 2Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
  • 3Department of Physics of Complex Systems, Eötvös University, H-1117 Budapest, Pázmány Péter sétány 1/A, Hungary

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Issue

Vol. 107, Iss. 27 — 30 December 2011

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