• Open Access

van der Waals Interactions in Ionic and Semiconductor Solids

Guo-Xu Zhang, Alexandre Tkatchenko, Joachim Paier, Heiko Appel, and Matthias Scheffler
Phys. Rev. Lett. 107, 245501 – Published 5 December 2011
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Abstract

van der Waals (vdW) energy corrected density-functional theory [Phys. Rev. Lett. 102, 073005 (2009)] is applied to study the cohesive properties of ionic and semiconductor solids (C, Si, Ge, GaAs, NaCl, and MgO). The required polarizability and dispersion coefficients are calculated using the dielectric function obtained from time-dependent density-functional theory. Coefficients for “atoms in the solid” are then calculated from the Hirshfeld partitioning of the electron density. It is shown that the Clausius-Mossotti equation that relates the polarizability and the dielectric function is accurate even for covalently-bonded semiconductors. We find an overall improvement in the cohesive properties of Si, Ge, GaAs, NaCl, and MgO, when vdW interactions are included on top of the Perdew-Burke-Ernzerhof or Heyd-Scuseria-Ernzerhof functionals. The relevance of our findings for other solids is discussed.

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  • Received 2 June 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.245501

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Published by the American Physical Society

Authors & Affiliations

Guo-Xu Zhang, Alexandre Tkatchenko*, Joachim Paier, Heiko Appel, and Matthias Scheffler

  • Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany

  • *tkatchen@fhi-berlin.mpg.de

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Vol. 107, Iss. 24 — 9 December 2011

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