Scaling Theory for Percolative Charge Transport in Disordered Molecular Semiconductors

J. Cottaar, L. J. A. Koster, R. Coehoorn, and P. A. Bobbert
Phys. Rev. Lett. 107, 136601 – Published 19 September 2011

Abstract

We present a scaling theory for charge transport in disordered molecular semiconductors that extends percolation theory by including bonds with conductances close to the percolating one in the random-resistor network representing charge hopping. A general and compact expression is given for the charge mobility for Miller-Abrahams and Marcus hopping on different lattices with Gaussian energy disorder, with parameters determined from numerically exact results. The charge-concentration dependence is universal. The model-specific temperature dependence can be used to distinguish between the hopping models.

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  • Received 20 June 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.136601

© 2011 American Physical Society

Authors & Affiliations

J. Cottaar1, L. J. A. Koster2, R. Coehoorn3,1, and P. A. Bobbert1

  • 1Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
  • 2Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
  • 3Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands

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Issue

Vol. 107, Iss. 13 — 23 September 2011

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