Spin-Orbit Symmetries of Conduction Electrons in Silicon

Pengke Li and Hanan Dery
Phys. Rev. Lett. 107, 107203 – Published 1 September 2011
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Abstract

We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the multivalley conduction band. We find excellent agreement with experimental results. Similar to the usage of the Kane Hamiltonian in direct band-gap semiconductors, the new Hamiltonian can be used to study spin properties of electrons in silicon.

  • Figure
  • Received 21 March 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.107203

© 2011 American Physical Society

Authors & Affiliations

Pengke Li* and Hanan Dery

  • Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York, 14627, USA

  • *pengke@ece.rochester.edu

See Also

Proximity Effects of a Symmetry-Breaking Interface on Spins of Photoexcited Electrons

Lan Qing, Yang Song, and Hanan Dery
Phys. Rev. Lett. 107, 107202 (2011)

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Vol. 107, Iss. 10 — 2 September 2011

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