Torsional Response and Dissipationless Viscosity in Topological Insulators

Taylor L. Hughes, Robert G. Leigh, and Eduardo Fradkin
Phys. Rev. Lett. 107, 075502 – Published 9 August 2011

Abstract

We consider the viscoelastic response of the electronic degrees of freedom in 2D and 3D topological insulators (TI’s). Our primary focus is on the 2D Chern insulator which exhibits a bulk dissipationless viscosity analogous to the quantum Hall viscosity predicted in integer and fractional quantum Hall states. We show that the dissipationless viscosity is the response of a TI to torsional deformations of the underlying lattice geometry. The viscoelastic response also indicates that crystal dislocations in Chern insulators will carry momentum density. We briefly discuss generalizations to 3D which imply that time-reversal invariant TI’s will exhibit a quantum Hall viscosity on their surfaces.

  • Figure
  • Received 18 January 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.075502

© 2011 American Physical Society

Authors & Affiliations

Taylor L. Hughes, Robert G. Leigh, and Eduardo Fradkin

  • Department of Physics, University of Illinois, 1110 West Green St, Urbana, Illinois 61801, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 107, Iss. 7 — 12 August 2011

Reuse & Permissions
Access Options
CHORUS

Article Available via CHORUS

Download Accepted Manuscript
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×