Dynamically Stabilized Growth of Polar Oxides: The Case of MgO(111)

Vlado K. Lazarov, Zhuhua Cai, Kenta Yoshida, K. Honglian L. Zhang, M. Weinert, Katherine S. Ziemer, and Philip J. Hasnip
Phys. Rev. Lett. 107, 056101 – Published 28 July 2011

Abstract

By using MgO(111) as a model system for polar oxide film growth, we show by first-principles calculations that H acts as a surfactant, i.e., the H changes its position and bonding during the growth process, remaining in the surface region. Continuous presence of H during the growth of MgO(111) film efficiently removes the microscopic dipole moment, thus enabling the growth of perfect fcc-ordered MgO(111) films. These theoretical predictions are confirmed experimentally by molecular beam epitaxy single crystal growth of MgO(111) on SiC(0001).

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  • Received 9 April 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.056101

© 2011 American Physical Society

Authors & Affiliations

Vlado K. Lazarov1,2,*, Zhuhua Cai3, Kenta Yoshida2, K. Honglian L. Zhang4, M. Weinert5, Katherine S. Ziemer3, and Philip J. Hasnip1

  • 1Department of Physics, University of York, York YO10 5DD, United Kingdom
  • 2York JEOL Nanocentre, University of York, YO10 5BR, United Kingdom
  • 3Chemical Engineering Department, Northeastern University, Boston, Massachusetts, 02115, USA
  • 4Chemistry Department, University of Oxford, Oxford, OX1 3TA, United Kingdom
  • 5Physics Department, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin, 53211, USA

  • *Corresponding author vlado.lazarov@york.ac.uk

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Vol. 107, Iss. 5 — 29 July 2011

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