Efficient Spin Injector Scheme Based on Heusler Materials

Stanislav Chadov, Tanja Graf, Kristina Chadova, Xuefang Dai, Frederick Casper, Gerhard H. Fecher, and Claudia Felser
Phys. Rev. Lett. 107, 047202 – Published 18 July 2011

Abstract

We present a rational design scheme intended to provide stable high spin polarization at the interfaces of the magnetoresistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principles calculations verify that the interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediately between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.

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  • Received 30 March 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.047202

© 2011 American Physical Society

Authors & Affiliations

Stanislav Chadov1,*, Tanja Graf1, Kristina Chadova2, Xuefang Dai1, Frederick Casper1, Gerhard H. Fecher1, and Claudia Felser1

  • 1Institut für Anorganische und Analytische Chemie, Johannes Gutenberg–Universtität, 55099 Mainz, Germany
  • 2Department Chemie und Biochemie, Ludwig Maximilians–Universität, 81377 München, Germany

  • *chadov@uni-mainz.de

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Issue

Vol. 107, Iss. 4 — 22 July 2011

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