Tuning the Limiting Thickness of a Thin Oxide Layer on Al(111) with Oxygen Gas Pressure

Na Cai, Guangwen Zhou, Kathrin Müller, and David E. Starr
Phys. Rev. Lett. 107, 035502 – Published 11 July 2011

Abstract

We report an x-ray photoelectron spectroscopy study of the oxidation of Al(111) surfaces at room temperature, which reveals that the limiting thickness of an aluminum oxide film can be tuned by using oxygen pressure. This behavior is attributed to a strong dependence of the kinetic potential on the oxygen gas pressure. The coverage of oxygen anions on the surface of the oxide film depends on the gas pressure leading to a pressure dependence of the kinetic potential. Our results indicate that a significantly large oxygen pressure (>1Torr) is required to develop the saturated surface coverage of oxygen ions, which results in the maximum kinetic potential and therefore the saturated limiting thickness of the oxide film.

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  • Received 7 April 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.035502

© 2011 American Physical Society

Authors & Affiliations

Na Cai and Guangwen Zhou*

  • Department of Mechanical Engineering and Multidisciplinary Program in Materials Science and Engineering, State University of New York, Binghamton, New York 13902, USA

Kathrin Müller and David E. Starr

  • Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA

  • *To whom all correspondence should be addressed. gzhou@binghamton.edu

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Issue

Vol. 107, Iss. 3 — 15 July 2011

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