Speedup of Doping Fronts in Organic Semiconductors through Plasma Instability

V. Bychkov, P. Matyba, V. Akkerman, M. Modestov, D. Valiev, G. Brodin, C. K. Law, M. Marklund, and L. Edman
Phys. Rev. Lett. 107, 016103 – Published 30 June 2011

Abstract

The dynamics of doping transformation fronts in organic semiconductor plasma is studied for application in light-emitting electrochemical cells. We show that new fundamental effects of the plasma dynamics can significantly improve the device performance. We obtain an electrodynamic instability, which distorts the doping fronts and increases the transformation rate considerably. We explain the physical mechanism of the instability, develop theory, provide experimental evidence, perform numerical simulations, and demonstrate how the instability strength may be amplified technologically. The electrodynamic plasma instability obtained also shows interesting similarity to the hydrodynamic Darrieus-Landau instability in combustion, laser ablation, and astrophysics.

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  • Received 28 April 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.016103

© 2011 American Physical Society

Authors & Affiliations

V. Bychkov1, P. Matyba1, V. Akkerman2, M. Modestov1, D. Valiev1, G. Brodin1, C. K. Law2,3, M. Marklund1, and L. Edman1

  • 1Department of Physics, Umeå University, SE-90187 Umeå, Sweden
  • 2Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544-5263, USA
  • 3Center for Combustion Energy, Tsinghua University, Beijing 100084, China

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Vol. 107, Iss. 1 — 1 July 2011

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