Unconventional Transport in the “Hole” Regime of a Si Double Quantum Dot

Teck Seng Koh, C. B. Simmons, M. A. Eriksson, S. N. Coppersmith, and Mark Friesen
Phys. Rev. Lett. 106, 186801 – Published 4 May 2011
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Abstract

Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional “hole” model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extracted from transport data in the multiple-electron regime, we identify a novel spin-flip cotunneling process that lifts a singlet blockade.

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  • Received 1 September 2010

DOI:https://doi.org/10.1103/PhysRevLett.106.186801

© 2011 American Physical Society

Authors & Affiliations

Teck Seng Koh, C. B. Simmons, M. A. Eriksson, S. N. Coppersmith, and Mark Friesen

  • Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

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Issue

Vol. 106, Iss. 18 — 6 May 2011

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