Gate-Voltage Control of Oxygen Diffusion on Graphene

Alejandro M. Suarez, Ljubisa R. Radovic, Ezra Bar-Ziv, and Jorge O. Sofo
Phys. Rev. Lett. 106, 146802 – Published 5 April 2011

Abstract

We analyze the diffusion of oxygen atoms on graphene and its dependence on the carrier density controlled by a gate voltage. We use density functional theory to determine the equilibrium adsorption sites, the transition state, and the attempt frequency for different carrier densities. The ease of diffusion is strongly dependent on carrier density. For neutral graphene, we calculate a barrier of 0.73 eV; however, upon electron doping the barrier decreases almost linearly to reach values as low as 0.15 eV for densities of 7.6×1013cm2. This implies an increase of more than 9 orders of magnitude in the diffusion coefficient at room temperature. This dramatic change is due to a combined effect of bonding reduction in the equilibrium state and bonding increase at the transition state and can be used to control the patterning of oxidized regions by an adequate variation of the gate voltage.

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  • Received 5 September 2010

DOI:https://doi.org/10.1103/PhysRevLett.106.146802

© 2011 American Physical Society

Authors & Affiliations

Alejandro M. Suarez1, Ljubisa R. Radovic2,3, Ezra Bar-Ziv4, and Jorge O. Sofo1,5,*

  • 1Department of Physics, Penn State University, University Park, Pennsylvania 16802, USA
  • 2Department of Energy and Mineral Engineering, Penn State University, University Park, Pennsylvania 16802, USA
  • 3Department of Chemical Engineering, University of Concepción, Concepción, Chile
  • 4Ben-Gurion University of the Negev, Beer-Sheva, Israel
  • 5Materials Research Institute, Penn State University, University Park, Pennsylvania 16802, USA

  • *Corresponding author. sofo@psu.edu

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Issue

Vol. 106, Iss. 14 — 8 April 2011

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