New Mechanism for Positronium Formation on a Silicon Surface

D. B. Cassidy, T. H. Hisakado, H. W. K. Tom, and A. P. Mills, Jr.
Phys. Rev. Lett. 106, 133401 – Published 31 March 2011

Abstract

We describe experiments in which positronium (Ps) is emitted from the surface of p-doped Si(100), following positron implantation. The observed emission rate is proportional to a Boltzmann factor exp{EA/kT}, which is dependent on the temperature T of the sample and a characteristic energy EA=(0.253±0.004)eV. Surprisingly, however, the Ps emission energy has a constant value of 0.16eV, much greater than kT. This observation suggests the spontaneous emission of energetic Ps from a short-lived metastable state that becomes thermally accessible to available surface electrons once the positron is present. A likely candidate for this entity is an electron-positron state analogous to the surface exciton observed on p-Si(100) c(4×2) by Weinelt et al. [Phys. Rev. Lett. 92, 126801 (2004)].

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  • Received 4 February 2011

DOI:https://doi.org/10.1103/PhysRevLett.106.133401

© 2011 American Physical Society

Authors & Affiliations

D. B. Cassidy, T. H. Hisakado, H. W. K. Tom, and A. P. Mills, Jr.

  • Department of Physics and Astronomy, University of California, Riverside, California 92521-0413, USA

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Issue

Vol. 106, Iss. 13 — 1 April 2011

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