Ultrafast Strain-Induced Current in a GaAs Schottky Diode

D. M. Moss, A. V. Akimov, B. A. Glavin, M. Henini, and A. J. Kent
Phys. Rev. Lett. 106, 066602 – Published 11 February 2011

Abstract

Picosecond acoustic pulses generated by femtosecond laser excitation of a metal film induce a transient current with subnanosecond rise time in a GaAs/Au Schottky diode. The signal consists of components due to the strain pulse crossing the edge of the depletion layer in the GaAs and also the GaAs/Au interface. A theoretical model is presented for the former and is shown to be in very good agreement with the experiment.

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  • Received 30 November 2010

DOI:https://doi.org/10.1103/PhysRevLett.106.066602

© 2011 American Physical Society

Authors & Affiliations

D. M. Moss1, A. V. Akimov1, B. A. Glavin2, M. Henini1, and A. J. Kent1,*

  • 1School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
  • 2Institute of Semiconductor Physics, National Academy of Sciences, Kiev 03028, Ukraine

  • *Corresponding author. Anthony.Kent@Nottingham.ac.uk

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Vol. 106, Iss. 6 — 11 February 2011

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