Breaking Elastic Field Symmetry with Substrate Vicinality

L. Persichetti, A. Sgarlata, M. Fanfoni, and A. Balzarotti
Phys. Rev. Lett. 106, 055503 – Published 2 February 2011

Abstract

We present a novel approach to engineer the growth of strained epitaxial films based on tailoring the elastic-interaction potential between nanostructures with substrate vicinality. By modeling the island-island interaction energy surface within continuum elasticity theory, we find that its fourfold symmetry is broken at high miscuts, producing directions of reduced elastic-interaction energy. As a consequence, it is possible to direct the Ge island growth on highly misoriented Si(001) substrates towards desired pathways.

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  • Received 4 November 2010

DOI:https://doi.org/10.1103/PhysRevLett.106.055503

© 2011 American Physical Society

Authors & Affiliations

L. Persichetti, A. Sgarlata, M. Fanfoni, and A. Balzarotti

  • Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica,1-00133 Roma, Italy

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Issue

Vol. 106, Iss. 5 — 4 February 2011

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