Abstract
We present a novel approach to engineer the growth of strained epitaxial films based on tailoring the elastic-interaction potential between nanostructures with substrate vicinality. By modeling the island-island interaction energy surface within continuum elasticity theory, we find that its fourfold symmetry is broken at high miscuts, producing directions of reduced elastic-interaction energy. As a consequence, it is possible to direct the Ge island growth on highly misoriented Si(001) substrates towards desired pathways.
- Received 4 November 2010
DOI:https://doi.org/10.1103/PhysRevLett.106.055503
© 2011 American Physical Society