In Situ Observation of Antisite Defect Formation during Crystal Growth

M. J. Kramer, M. I. Mendelev, and R. E. Napolitano
Phys. Rev. Lett. 105, 245501 – Published 7 December 2010

Abstract

In situ x-ray diffraction (XRD) coupled with molecular dynamics (MD) simulations have been used to quantify antisite defect trapping during crystallization. Rietveld refinement of the XRD data revealed a marked lattice distortion which involves an a axis expansion and a c axis contraction of the stable C11b phase. The observed lattice response is proportional in magnitude to the growth rate, suggesting that the behavior is associated with the kinetic trapping of lattice defects. MD simulations demonstrate that this lattice response is due to incorporation of 1% to 2% antisite defects during growth.

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  • Received 30 June 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.245501

© 2010 The American Physical Society

Authors & Affiliations

M. J. Kramer1,2,*, M. I. Mendelev1,†, and R. E. Napolitano1,2,‡

  • 1Division of Materials Science and Engineering, Ames Laboratory, Ames, Iowa, 50011, USA
  • 2Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011, USA

  • *mjkramer@ameslab.gov
  • mendelev@ameslab.gov
  • ralphn@iastate.edu

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Vol. 105, Iss. 24 — 10 December 2010

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