Abstract
The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of depleted silicon nano- and microstructures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces independent of the applied stress. Importantly, this time-varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.
- Received 13 October 2010
DOI:https://doi.org/10.1103/PhysRevLett.105.226802
© 2010 The American Physical Society
Synopsis
Masking the true effect?
Published 24 November 2010
New measurements of silicon nanostructures cast doubt on the possibility that they support a giant piezoresistive effect.
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