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Giant Piezoresistance Effects in Silicon Nanowires and Microwires

J. S. Milne, A. C. H. Rowe, S. Arscott, and Ch. Renner
Phys. Rev. Lett. 105, 226802 – Published 23 November 2010
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Abstract

The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of depleted silicon nano- and microstructures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces independent of the applied stress. Importantly, this time-varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.

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  • Received 13 October 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.226802

© 2010 The American Physical Society

Synopsis

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Masking the true effect?

Published 24 November 2010

New measurements of silicon nanostructures cast doubt on the possibility that they support a giant piezoresistive effect.

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Authors & Affiliations

J. S. Milne* and A. C. H. Rowe

  • Physique de la matière condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau, France

S. Arscott

  • Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), CNRS UMR8520, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d’Ascq, France

Ch. Renner

  • Department of Condensed Matter Physics, NCCR Materials with Novel Electronic Properties, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland

  • *jason.milne@polytechnique.edu

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Issue

Vol. 105, Iss. 22 — 26 November 2010

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