Topological Nature of the Phonon Hall Effect

Lifa Zhang, Jie Ren, Jian-Sheng Wang, and Baowen Li
Phys. Rev. Lett. 105, 225901 – Published 24 November 2010
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Abstract

We provide a topological understanding of the phonon Hall effect in dielectrics with Raman spin-phonon coupling. A general expression for phonon Hall conductivity is obtained in terms of the Berry curvature of band structures. We find a nonmonotonic behavior of phonon Hall conductivity as a function of the magnetic field. Moreover, we observe a phase transition in the phonon Hall effect, which corresponds to the sudden change of band topology, characterized by the altering of integer Chern numbers. This can be explained by touching and splitting of phonon bands.

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  • Received 2 August 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.225901

© 2010 The American Physical Society

Authors & Affiliations

Lifa Zhang1, Jie Ren2,1, Jian-Sheng Wang1, and Baowen Li2,1

  • 1Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542, Republic of Singapore
  • 2NUS Graduate School for Integrative Sciences and Engineering, Singapore 117456, Republic of Singapore

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Issue

Vol. 105, Iss. 22 — 26 November 2010

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