Abstract
We use as a model system to elucidate the effect of the interface on ferroelectric behavior in epitaxial oxide films on silicon. Using both first-principles computations and synchrotron x-ray diffraction measurements, we show that structurally imposed boundary conditions at the interface stabilize a fixed (pinned) polarization in the film but inhibit ferroelectric switching. We demonstrate that the interface chemistry responsible for these phenomena is general to epitaxial silicon-oxide interfaces, impacting on the design of silicon-based functional oxide devices.
- Received 19 June 2010
DOI:https://doi.org/10.1103/PhysRevLett.105.217601
© 2010 The American Physical Society
Synopsis
One cannot polarize by strain alone
Published 17 November 2010
Understanding the role of interface effects will be essential for designing thin-film ferroelectrics on semiconductors.
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