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Interface-Induced Polarization and Inhibition of Ferroelectricity in Epitaxial SrTiO3/Si

A. M. Kolpak, F. J. Walker, J. W. Reiner, Y. Segal, D. Su, M. S. Sawicki, C. C. Broadbridge, Z. Zhang, Y. Zhu, C. H. Ahn, and S. Ismail-Beigi
Phys. Rev. Lett. 105, 217601 – Published 17 November 2010
Physics logo See Synopsis: One cannot polarize by strain alone
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Abstract

We use SrTiO3/Si as a model system to elucidate the effect of the interface on ferroelectric behavior in epitaxial oxide films on silicon. Using both first-principles computations and synchrotron x-ray diffraction measurements, we show that structurally imposed boundary conditions at the interface stabilize a fixed (pinned) polarization in the film but inhibit ferroelectric switching. We demonstrate that the interface chemistry responsible for these phenomena is general to epitaxial silicon-oxide interfaces, impacting on the design of silicon-based functional oxide devices.

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  • Received 19 June 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.217601

© 2010 The American Physical Society

Synopsis

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One cannot polarize by strain alone

Published 17 November 2010

Understanding the role of interface effects will be essential for designing thin-film ferroelectrics on semiconductors.

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Authors & Affiliations

A. M. Kolpak1,2, F. J. Walker1,2, J. W. Reiner1,2, Y. Segal1,2, D. Su3, M. S. Sawicki1,4, C. C. Broadbridge1,4, Z. Zhang5, Y. Zhu1,3, C. H. Ahn1,2, and S. Ismail-Beigi1,2

  • 1Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06520-8284, USA
  • 2Department of Applied Physics, Yale University, New Haven, Connecticut 06520-8284, USA
  • 3Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973-5000, USA
  • 4Department of Physics, Southern Connecticut State University, 501 Crescent Street, New Haven, Connecticut 06515, USA
  • 5Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA

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Issue

Vol. 105, Iss. 21 — 19 November 2010

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