Atomic-Scale Compensation Phenomena at Polar Interfaces

Matthew F. Chisholm, Weidong Luo, Mark P. Oxley, Sokrates T. Pantelides, and Ho Nyung Lee
Phys. Rev. Lett. 105, 197602 – Published 4 November 2010
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Abstract

The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density-functional theory to show how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by an interfacial charge generated, for example, by oxygen vacancies.

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  • Received 30 March 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.197602

© 2010 The American Physical Society

Authors & Affiliations

Matthew F. Chisholm1,*, Weidong Luo2,1, Mark P. Oxley2,1, Sokrates T. Pantelides2,1, and Ho Nyung Lee1

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 2Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA

  • *chisholmmf@ornl.gov

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Issue

Vol. 105, Iss. 19 — 5 November 2010

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