Band Structure of SnTe Studied by Photoemission Spectroscopy

P. B. Littlewood, B. Mihaila, R. K. Schulze, D. J. Safarik, J. E. Gubernatis, A. Bostwick, E. Rotenberg, C. P. Opeil, T. Durakiewicz, J. L. Smith, and J. C. Lashley
Phys. Rev. Lett. 105, 086404 – Published 20 August 2010

Abstract

We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p bands. Our study reveals the conjectured complex Fermi surface structure near the L points showing topological changes in the bands from disconnected pockets, to open tubes, and then to cuboids as the binding energy increases, resolving lingering issues about the electronic structure. The chemical potential at the crystal surface is found to be 0.5 eV below the gap, corresponding to a carrier density of p=1.14×1021cm3 or 7.2×102 holes per unit cell. At a temperature below the cubic-rhombohedral structural transition a small shift in spectral energy of the valance band is found, in agreement with model predictions.

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  • Received 2 June 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.086404

© 2010 The American Physical Society

Authors & Affiliations

P. B. Littlewood1, B. Mihaila2, R. K. Schulze2, D. J. Safarik2, J. E. Gubernatis3, A. Bostwick4, E. Rotenberg4, C. P. Opeil5, T. Durakiewicz6, J. L. Smith2, and J. C. Lashley2

  • 1Cavendish Laboratory, Cambridge University, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 2Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico, USA
  • 3Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico, USA
  • 4Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, USA
  • 5Department of Physics, Boston College, Chestnut Hill, Massachusetts, USA
  • 6Materials Physics and Applications, Los Alamos National Laboratory, Los Alamos, New Mexico, USA

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Issue

Vol. 105, Iss. 8 — 20 August 2010

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