Evidence for a Correlated Insulator to Antiferromagnetic Metal Transition in CrN

P. A. Bhobe, A. Chainani, M. Taguchi, T. Takeuchi, R. Eguchi, M. Matsunami, K. Ishizaka, Y. Takata, M. Oura, Y. Senba, H. Ohashi, Y. Nishino, M. Yabashi, K. Tamasaku, T. Ishikawa, K. Takenaka, H. Takagi, and S. Shin
Phys. Rev. Lett. 104, 236404 – Published 11 June 2010
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Abstract

We investigate the electronic structure of chromium nitride (CrN) across the first-order magnetostructural transition at TN286K. Resonant photoemission spectroscopy (PES) shows a gap in the 3d partial density of states at the Fermi level and an on-site Coulomb energy U4.5eV, indicating strong electron-electron correlations. Bulk-sensitive high-resolution (6 meV) laser PES reveals a clear Fermi edge indicating an antiferromagnetic metal below TN. Hard x-ray Cr 2p core-level PES shows T-dependent changes across TN which originate from screening due to coherent states as substantiated by cluster model calculations using the experimentally observed U. Electrical resistivity confirms an insulator above TN (Eg70meV) becoming a disordered metal below TN. Thus, CrN transforms from a correlated insulator to an antiferromagnetic metal, coupled to the magnetostructural transition.

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  • Received 17 February 2010

DOI:https://doi.org/10.1103/PhysRevLett.104.236404

©2010 American Physical Society

Authors & Affiliations

P. A. Bhobe1,2,*, A. Chainani2, M. Taguchi2, T. Takeuchi3, R. Eguchi1,2, M. Matsunami1,2, K. Ishizaka1, Y. Takata2, M. Oura2, Y. Senba3, H. Ohashi3, Y. Nishino2,†, M. Yabashi2, K. Tamasaku2, T. Ishikawa2, K. Takenaka4,5, H. Takagi5, and S. Shin1,2

  • 1Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
  • 2RIKEN, SPring-8 Centre, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
  • 3JASRI/SPring-8, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
  • 4Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan
  • 5RIKEN, The Institute for Physical and Chemical Research, Wako, Saitama 351-0198, Japan

  • *Corresponding author. preeti@spring8.or.jp
  • Present address: Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan.

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Vol. 104, Iss. 23 — 11 June 2010

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