Colossal Magnetoresistance in an Ultraclean Weakly Interacting 2D Fermi Liquid

Xiaoqing Zhou, B. A. Piot, M. Bonin, L. W. Engel, S. Das Sarma, G. Gervais, L. N. Pfeiffer, and K. W. West
Phys. Rev. Lett. 104, 216801 – Published 28 May 2010

Abstract

We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field, the magnetoresistance is observed to increase by a factor of 300 from 0 to 45 T without the system undergoing any metal-insulator transition. We discuss how this colossal magnetoresistance effect cannot be attributed to the spin degree of freedom or localization physics, but most likely emanates from strong magneto-orbital coupling between the two-dimensional electron gas and the magnetic field. Our observation is consistent with a field-induced 2D-to-3D transition in the confined electronic system.

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  • Received 30 March 2010

DOI:https://doi.org/10.1103/PhysRevLett.104.216801

©2010 American Physical Society

Authors & Affiliations

Xiaoqing Zhou1, B. A. Piot2, M. Bonin1, L. W. Engel3, S. Das Sarma4, G. Gervais1, L. N. Pfeiffer5, and K. W. West5

  • 1Department of Physics, McGill University, Montreal, H3A 2T8, Canada
  • 2Laboratoire National des Champs Magnétiques Intenses, Centre National de la Recherche Scientifique, 25 Avenue des Martyrs, F-38042 Grenoble, France
  • 3National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
  • 4Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
  • 5Department of Electrical Engineering, Princeton University, Princeton New Jersey 08544, USA

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Issue

Vol. 104, Iss. 21 — 28 May 2010

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