Quantum Confinement by an Order-Disorder Boundary in Nanocrystalline Silicon

L. Bagolini, A. Mattoni, G. Fugallo, L. Colombo, E. Poliani, S. Sanguinetti, and E. Grilli
Phys. Rev. Lett. 104, 176803 – Published 27 April 2010

Abstract

We predict theoretically and show experimentally the occurrence of quantum confinement in hydrogenated nanocrystalline silicon. We prove that only valence states (positively charged carriers) are confined effectively within the nanograins. The emission associated to confined states is verified by photoluminescence experiments on nanocrystalline samples with controlled grain size. According to the present study, we propose nanocrystalline silicon as a promising material for oxygen-free optoelectronics, silicon-based memories and photovoltaics.

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  • Received 16 October 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.176803

©2010 American Physical Society

Authors & Affiliations

L. Bagolini1,2, A. Mattoni2,*, G. Fugallo3, and L. Colombo2,3

  • 1Dipartimento di Energetica, Università di Roma “La Sapienza”, Via A. Scarpa 1416, 00161 Roma, Italy
  • 2Istituto Officina dei Materiali del CNR (CNR-IOM) Unità SLACS, Cittadella Universitaria, I-09042, Monserrato (Ca), Italy
  • 3Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, I-09042, Monserrato (Ca), Italy

E. Poliani, S. Sanguinetti, and E. Grilli

  • L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, I–20125, Milano, Italy

  • *alessandro.mattoni@dsf.unica.it

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Vol. 104, Iss. 17 — 30 April 2010

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