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Role of Electronic Structure in the Martensitic Phase Transition of Ni2Mn1+xSn1x Studied by Hard-X-Ray Photoelectron Spectroscopy and Ab Initio Calculation

M. Ye, A. Kimura, Y. Miura, M. Shirai, Y. T. Cui, K. Shimada, H. Namatame, M. Taniguchi, S. Ueda, K. Kobayashi, R. Kainuma, T. Shishido, K. Fukushima, and T. Kanomata
Phys. Rev. Lett. 104, 176401 – Published 26 April 2010
Physics logo See Viewpoint: Controlling the martensitic transition in Heusler shape-memory materials

Abstract

We have revealed the underlying mechanism of the martensitic phase transition (MPT) in a new class of ferromagnetic shape memory alloys, Ni2Mn1+xSn1x, by the combination of bulk-sensitive hard-x-ray photoelectron spectroscopy and a first-principles density-functional calculation. The Ni 3d eg state in the cubic phase systematically shifts towards the Fermi energy with an increase in the number of Mn atoms substituted in the Sn sites. An abrupt decrease of the intensity of the Ni 3d eg states upon MPT for x=0.360.42 has been observed in the vicinity of the Fermi level. The energy shift of the Ni 3d minority-spin eg state in the cubic phase originates from hybridization with the antiferromagnetically coupled Mn in the Sn site. Below the MPT temperature, the Ni 3d state splits into two levels located below and above the Fermi energy in order to achieve an energetically stable state.

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  • Received 10 February 2010

DOI:https://doi.org/10.1103/PhysRevLett.104.176401

©2010 American Physical Society

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Controlling the martensitic transition in Heusler shape-memory materials

Published 26 April 2010

Understanding the electronic structure of shape-memory alloys promises magnetic control over their crystal structures and hence mechanical properties.

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Authors & Affiliations

M. Ye1, A. Kimura1,*, Y. Miura2, M. Shirai2, Y. T. Cui3, K. Shimada3, H. Namatame3, M. Taniguchi1,3, S. Ueda4, K. Kobayashi4, R. Kainuma5, T. Shishido6, K. Fukushima7, and T. Kanomata7

  • 1Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, 739-8526, Japan
  • 2Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
  • 3Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima, 739-0046, Japan
  • 4NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148, Japan
  • 5Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
  • 6Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 7Faculty of Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan

  • *akiok@hiroshima-u.ac.jp

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Issue

Vol. 104, Iss. 17 — 30 April 2010

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