Spontaneous Formation of Surface Antisite Defects in the Stabilization of the Sb-Rich GaSb(001) Surface

Conor Hogan, Rita Magri, and Rodolfo Del Sole
Phys. Rev. Lett. 104, 157402 – Published 14 April 2010

Abstract

This Letter solves the long-standing puzzle [Phys. Rev. Lett. 79, 693 (1997)] of why GaSb(001) apparently violates the electron counting rule (ECR) in forming a reconstruction featuring long Sb-dimer chains, rather than the c(4×4) reconstruction found in all other arsenide and antimonide III–V compounds in the V-rich regime. We find that an alternative strategy, that in fact satisfies the ECR, is followed by the Sb-rich GaSb(001) surface, whereby long Sb-dimer chains are stabilized by randomly distributed subsurface Ga antisite defects. The excess of surface Sb drives the defect formation that in turn stabilizes the surface in a metastable phase. The transition to the c(4×4) reconstruction, where the ECR is instead satisfied through missing dimers, is therefore inhibited. Our conclusions are supported by ab initio simulations of experimental reflectance anisotropy spectra.

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  • Received 23 June 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.157402

©2010 American Physical Society

Authors & Affiliations

Conor Hogan1,*, Rita Magri2, and Rodolfo Del Sole1

  • 1European Theoretical Spectroscopy Facility (ETSF), CNR-INFM-SMC, and Dipartimento di Fisica, Università di Roma “Tor Vergata,” Via della Ricerca Scientifica 1, 00133 Roma, Italy
  • 2Centro S3, CNR-Istituto di Nanoscienze and Dipartimento di Fisica, Università di Modena e Reggio Emilia, Via Campi 213/A, I-41100 Modena, Italy

  • *Corresponding author: conor.hogan@roma2.infn.it

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Vol. 104, Iss. 15 — 16 April 2010

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