Spectroscopic Measurement of Interlayer Screening in Multilayer Epitaxial Graphene

Dong Sun, Charles Divin, Claire Berger, Walt A. de Heer, Phillip N. First, and Theodore B. Norris
Phys. Rev. Lett. 104, 136802 – Published 1 April 2010

Abstract

The substrate-induced charge-density profile in carbon face epitaxial graphene is determined using nondegenerate ultrafast midinfrared pump-probe spectroscopy. Distinct zero crossings in the differential transmission spectra are used to identify the Fermi levels of layers within the multilayer stack. Probing within the transmission window of the SiC substrate, we find the Fermi levels of the first four heavily doped layers to be, respectively, 360, 215, 140, and 93 meV above the Dirac point. The charge screening length is determined to be one graphene layer, in good agreement with theoretical predictions.

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  • Received 8 September 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.136802

©2010 American Physical Society

Authors & Affiliations

Dong Sun1, Charles Divin1, Claire Berger2, Walt A. de Heer2, Phillip N. First2, and Theodore B. Norris1,*

  • 1Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, Michigan 48109-2099, USA
  • 2School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

  • *To whom all correspondence should be addressed. tnorris@eecs.umich.edu

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Vol. 104, Iss. 13 — 2 April 2010

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