Surface Induced Asymmetry of Acceptor Wave Functions

C. Çelebi, J. K. Garleff, A. Yu. Silov, A. M. Yakunin, P. M. Koenraad, W. Van Roy, J.-M. Tang, and M. E. Flatté
Phys. Rev. Lett. 104, 086404 – Published 26 February 2010

Abstract

Measurements of the local density of states of individual acceptors in III–V semiconductors show that the symmetry of the acceptor states strongly depends on the depth of the atom below a (110) surface. Tight-binding calculations performed for a uniformly strained bulk material demonstrate that strain induced by the surface relaxation is responsible for the observed depth-dependent symmetry breaking of acceptor wave functions. As this effect is strongest for weakly bound acceptors, it explains within a unified approach the commonly observed triangular shapes of shallow acceptors and the crosslike shapes of deeply bound acceptor states in III–V materials.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 28 January 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.086404

©2010 American Physical Society

Authors & Affiliations

C. Çelebi, J. K. Garleff, A. Yu. Silov, A. M. Yakunin, and P. M. Koenraad

  • COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands

W. Van Roy

  • IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

J.-M. Tang

  • Department of Physics, University of New Hampshire, Durham, New Hampshire 03824, USA

M. E. Flatté

  • Optical Science and Technology Center and Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 104, Iss. 8 — 26 February 2010

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×