Hyperfine-Field-Mediated Spin Beating in Electrostatically Bound Charge Carrier Pairs

D. R. McCamey, K. J. van Schooten, W. J. Baker, S.-Y. Lee, S.-Y. Paik, J. M. Lupton, and C. Boehme
Phys. Rev. Lett. 104, 017601 – Published 8 January 2010
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Abstract

Organic semiconductors offer a unique environment to probe the hyperfine coupling of electronic spins to a nuclear spin bath. We explore the interaction of spins in electron-hole pairs in the presence of inhomogeneous hyperfine fields by monitoring the modulation of the current through an organic light emitting diode under coherent spin-resonant excitation. At weak driving fields, only one of the two spins in the pair precesses. As the driving field exceeds the difference in local hyperfine field experienced by electron and hole, both spins precess, leading to pronounced spin beating in the transient Rabi flopping of the current. We use this effect to measure the magnitude and spatial variation in hyperfine field on the scale of single carrier pairs, as required for evaluating models of organic magnetoresistance, improving organic spintronics devices, and illuminating spin decoherence mechanisms.

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  • Received 16 June 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.017601

©2010 American Physical Society

Authors & Affiliations

D. R. McCamey, K. J. van Schooten, W. J. Baker, S.-Y. Lee, S.-Y. Paik, J. M. Lupton*, and C. Boehme

  • Department of Physics and Astronomy, University of Utah, 115 South 1400 East, Salt Lake City, Utah 84112, USA

  • *lupton@physics.utah.edu
  • boehme@physics.utah.edu

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Issue

Vol. 104, Iss. 1 — 8 January 2010

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